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| MITSUBISHI SEMICONDUCTOR M54563P/FP 8-UNIT 500mA SOURCE TYPE DARLINGTON TRANSISTOR ARRAY WITH CLAMP DIODE DESCRIPTION M54563FP is an eight-circuit output-sourcing Darlington transistor array. The circuits are made of PNP and NPN transistors. This semiconductor integrated circuit performs highcurrent driving with extremely low input-current supply. PIN CONFIGURATION INPUT IN1 1 IN2 2 IN3 3 IN4 4 IN5 5 IN6 6 IN7 7 IN8 8 VS 9 18 O1 17 O2 16 O3 15 O4 14 O5 13 O6 12 O7 11 O8 10 GND OUTPUT FEATURES High breakdown voltage (BVCEO 50V) High-current driving (Io(max) = -500mA) With clamping diodes Driving available with PMOS IC output of 6 ~ 16V or with TTL output Wide operating temperature range (Ta = -20 to +75C) Output current-sourcing type Package type 18P4G(P) NC 1 20 NC APPLICATION Drives of relays, printers, LEDs, fluorescent display tubes and lamps, and interfaces between MOS-bipolar logic systems and relays, solenoids, or small motors FUNCTION The M54563P and M54563FP each have eight circuits, which are made of input inverters and current-sourcing outputs. The outputs are made of PNP transistors and NPN Darlington transistors. The PNP transistor base current is constant. A clamping diode is provided between each output and GND. VS and GND are used commonly among the eight circuits. The inputs have resistance of 3k, and voltage of up to 10V is applicable. Output current is 500 mA maximum. Supply voltage VS is 50V maximum. The M54563FP is enclosed in a molded small flat package, enabling space-saving design. INPUT IN1 2 IN2 3 IN3 4 IN4 5 IN5 6 IN6 7 IN7 8 IN8 9 VS 10 19 O1 18 O2 17 O3 16 O4 15 O5 14 O6 13 O7 12 O8 11 GND OUTPUT Package type 20P2N-A(FP) NC : No connection CIRCUIT DIAGRAM VS 20K 3K INPUT 7.2K 1.5K 3K OUTPUT GND The eight circuits share the VS and GND. The diode, indicated with the dotted line, is parasitic, and cannot be used. Unit : Aug. 1999 MITSUBISHI SEMICONDUCTOR M54563P/FP 8-UNIT 500mA SOURCE TYPE DARLINGTON TRANSISTOR ARRAY WITH CLAMP DIODE ABSOLUTE MAXIMUM RATINGS Symbol VCEO VS VI IO IF VR Pd Topr Tstg # # (Unless otherwise noted, Ta = -20 ~ +75C) Parameter Collector-emitter voltage Supply voltage Input voltage Output current Clamping diode forward current Clamping diode reverse voltage Power dissipation Operating temperature Storage temperature Output, L Conditions Ratings -0.5 ~ +50 50 -0.5 ~ +10 -500 -500 50 Unit V V V mA mA V W C C Current per circuit output, H Ta = 25C, when mounted on board 1.79(P)/1.10(FP) -20 ~ +75 -55 ~ +125 # : Unused I/O pins must be connected to GND. RECOMMENDED OPERATING CONDITIONS Symbol VS Supply voltage Output current (Current per 1 circuit when 8 circuits are coming on simultaneously) "H" input voltage "L" input voltage Parameter (Unless otherwise noted, Ta = -20 ~ +75C) min 0 Limits typ -- -- -- -- -- max 50 -350 Unit V IO Duty Cycle P : no more than 8% FP : no more than 5% Duty Cycle P : no more than 55% FP : no more than 30% 0 0 2.4 0 mA -100 10 0.2 V V VIH VIL ELECTRICAL CHARACTERISTICS Symbol IS (leak) # VCE (sat) II IS VF IR # (Unless otherwise noted, Ta = -20 ~ +75C) Parameter Supply leak current VS = 50V, VI = 0.2V Test conditions Limits min -- -- -- -- -- -- -- -- typ+ -- 1.6 1.45 0.6 2.9 5.6 -1.2 -- max 100 2.4 2.0 1.0 5.0 15.0 -2.4 100 Unit A V mA mA V A VS = 10V, VI = 2.4V, IO = -350mA Collector-emitter saturation voltage VS = 10V, VI = 2.4V, IO = -100mA Input current Supply current Clamping diode forward voltage Clamping diode reverse current VI = 3V VI = 10V VS = 50V, VI = 3V (all input) IF = -350mA VR = 50V + : The typical values are those measured under ambient temperature (Ta) of 25C. There is no guarantee that these values are obtained under any conditions. # : Unused I/O pins must be connected to GND. SWITCHING CHARACTERISTICS (Unless otherwise noted, Ta = 25C) Symbol ton toff Parameter Turn-on time Turn-off time CL = 15pF (note 1) Test conditions min -- -- Limits typ 100 4800 max -- -- Unit ns ns Aug. 1999 MITSUBISHI SEMICONDUCTOR M54563P/FP 8-UNIT 500mA SOURCE TYPE DARLINGTON TRANSISTOR ARRAY WITH CLAMP DIODE NOTE 1 TEST CIRCUIT INPUT VS Measured device 50% INPUT 50% TIMING DIAGRAM PG 50 RL CL OUTPUT 50% OUTPUT ton toff 50% (1) Pulse generator (PG) characteristics : PRR = 1kHz, tw = 10s, tr = 6ns, tf = 6ns, ZO = 50 VI = 0 to 2.4V (2) Input-output conditions : RL = 30, VS = 10V (3) Electrostatic capacity CL includes floating capacitance at connections and input capacitance at probes TYPICAL CHARACTERISTICS Output Saturation Voltage Output Current Characteristics -500 VS = 10V VI = 2.4V Ta = 75C Ta = 25C Ta = -20C Thermal Derating Factor Characteristics 2.0 M54563P Power dissipation Pd (W) 1.5 M54563FP Output current IO (mA) 50 75 100 -400 -300 1.0 -200 0.5 -100 0 0 25 0 0 0.5 1.0 1.5 2.0 2.5 Ambient temperature Ta (C) Duty-Cycle-Output Current Characteristics (M54563P) -500 Output saturation voltage VCE (sat) (V) Duty-Cycle-Output Current Characteristics (M54563P) -500 Output current IO (mA) Output current IO (mA) -400 -400 -300 -200 *The output current values represent the current per circuit. *Repeated frequency 10Hz *The value in the circle represents the value of the simultaneously-operated circuit. *Ta = 25C -300 -200 -100 *The output current values represent the current per circuit. *Repeated frequency 10Hz *The value in the circle represents the value of the simultaneously-operated circuit. *Ta = 75C -100 80 100 0 0 20 40 60 80 100 0 0 20 40 60 Duty cycle (%) Duty cycle (%) Aug. 1999 MITSUBISHI SEMICONDUCTOR M54563P/FP 8-UNIT 500mA SOURCE TYPE DARLINGTON TRANSISTOR ARRAY WITH CLAMP DIODE Duty-Cycle-Output Current Characteristics (M54563FP) -500 Output current IO (mA) Output current IO (mA) -400 Duty-Cycle-Output Current Characteristics (M54563FP) -500 -400 -300 -200 *The output current values represent the current per circuit. *Repeated frequency 10Hz *The value in the circle represents the value of the simultaneously-operated circuit. *Ta = 25C -300 -100 80 100 -200 -100 *The output current values represent the current per circuit. *Repeated frequency 10Hz *The value in the circle represents the value of the simultaneously-operated circuit. 0 0 20 40 60 0 *Ta = 75C 100 0 20 40 60 80 Duty cycle (%) Duty cycle (%) Grounded Emitter Transfer Characteristics -500 Forward bias current IF (mA) VS = 20V VS-VO = 4V Ta = 75C Ta = 25C Ta = -20C Clamping Diode Characteristics 500 Output current IO (mA) -400 400 Ta = 75C Ta = 25C Ta = -20C -300 300 -200 200 -100 100 0 0 0.2 0.4 0.6 0.8 1.0 0 0 0.5 1.0 1.5 2.0 Input voltage VI (V) Forward bias voltage VF (V) Input Characteristics 1.0 VS = 20V Ta = 75C Ta = 25C Ta = -20C Input Characteristics 5 VS = 20V Ta = 75C Ta = 25C Ta = -20C 0.8 Input current II (mA) 4 Input current II (mA) 3 4 5 0.6 3 0.4 2 0.2 1 0 0 1 2 0 0 2 4 6 8 10 Input voltage VI (V) Input voltage VI (V) Aug. 1999 |
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